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TGF11

AFM grating with trapezoid structures anisotropically etched in silicon
新皋企業 NANOSENSORS PPP-NCR AFM 原子力顯微鏡探針
  • Features one-dimensional arrays of trapezoidal steps etched into a silicon substrate. 

  • Smooth planar sidewalls formed by the (111) crystallographic planes in monocrystalline silicon. 

  • The sidewalls and horizontal top surfaces form a precise angle of 54.74°

Step height (1.75 µm) is an approximate value, NOT for vertical calibration purposes.

Structure Specifications

Structure Type
Pitch
Step Height
Accuracy
Edge Radii
1D arrays of trapezoidal steps
10 µm
~ 1.75 µm
0.1 µm
N/A

Chip Dimensions

Active Area
Chip Dimensions
Material / Coating
3 × 3 mm
5 × 5 × 0.3 mm
Monocrystalline silicon

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